PART |
Description |
Maker |
PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array 15ns programmable electrically erasable logic array Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers http://
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ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD Electrically-ErasableComplexPLD
|
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IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
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PA7128J-15 PA7128J-20 PA7128JI-20 PA7128S-15 PA712 |
15ns programmable electrically erasable logic array 20ns programmable electrically erasable logic array
|
ICT
|
BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM 8k隆驴8 bit electrically erasable PROM
|
Rohm
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
W27L520S-90 W27L520W-90 W27L520 W27L520S-70 W27L52 |
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics Corp WINBOND[Winbond]
|
LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
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ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|